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PDF NTBV5605 Data sheet ( Hoja de datos )
| Número de pieza | NTBV5605 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTB5605P, NTBV5605
Power MOSFET
-60 V, -18.5 A
P−Channel, D2PAK
Features
• Designed for Low RDS(on)
• Withstands High Energy in Avalanche and Commutation Modes
• AEC Q101 Qualified − NTBV5605
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Power Supplies
• PWM Motor Control
• Converters
• Power Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
VDSS
VGS
ID
−60
$20
−18.5
V
V
A
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
PD
88 W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 25 V, VGS = 5.0 V, IPK = 15 A,
L = 3.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
IDM
TJ,
TSTG
EAS
−55
−55 to
175
338
A
°C
mJ
TL 260 °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) – Steady State
RqJC
1.7 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1″ pad size (Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu Area 0.41 in2).
http://onsemi.com
V(BR)DSS
−60 V
RDS(on) TYP
120 mW @ −5.0 V
ID MAX
−18.5 A
P−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
2
1
3
D2PAK
CASE 418B
STYLE 2
NTB5605xG
AYWW
1 23
Gate Drain Source
x = P or blank
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NTB5605PT4G
D2PAK 800 / Tape & Reel
(Pb−Free)
NTBV5605T4G
D2PAK 800 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
August, 2011 − Rev. 4
1
Publication Order Number:
NTB5605P/D
1 page  
1
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
0.1
0.0001
0.01
0.001
NTB5605P, NTBV5605
0.01
t, TIME (s)
0.1
Figure 13. Thermal Response
1
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 14. Diode Reverse Recovery Waveform
10
http://onsemi.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NTBV5605.PDF ] | |
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