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PDF LT1N60 Data sheet ( Hoja de datos )
| Número de pieza | LT1N60 | |
| Descripción | N-channel MOSFET | |
| Fabricantes | Longtium Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de LT1N60 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Xi′an Longtium Microelectronics Technology Developing Co., Ltd.
Features
High ruggedness
RDS(ON) (Max 9 Ω)@VGS=10V
Gate Charge (Max 6nC)
Improved dv/dt Capability
100% Avalanche Tested
General Description
This power MOSFET is produced with advanced
VDMOS technology of LONGTIUMIC.
This technology enable power MOSFET to have
better characteristics,
Such as fast switching time, low on resistance, low
gate charge and especially excellent avalanche
characteristics.
This power MOSFET is usually used at AC adaptors
and SMPS .
LT1N60
N-channel MOSFET
N-channel MOSFET
2
Order Codes
Item Sales Type
1 LT C 1N60C
2 LT I 1N60C
3 LT D 1N60C
Marking
LT1N60C
LT1N60C
LT1N60C
Package
TO-92
TO-251
TO-252
Packaging
TAPE
TUBE
REEL
（2011-AUG Version1.0）www.longtiumic.com
1/7
1 page  
LT1N60
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 8. On resistance variation
vs. junction temperature
Fig. 9. Maximum drain current vs.
case temperature.
Fig. 10. Maximum safe operating area (TO-220)
Fig. 11. Transient thermal response curve
Xi′an Longtium Microelectronics Technology Developing Co., Ltd.
（2011-AUG Version1.0） www.longtiumic.com
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet LT1N60.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| LT1N60 | N-channel MOSFET | Longtium Microelectronics |
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