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PDF Si8810EDB Data sheet ( Hoja de datos )
| Número de pieza | Si8810EDB | |
| Descripción | N-Channel 20 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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N-Channel 20 V (D-S) MOSFET
Si8810EDB
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
20
RDS(on) () Max.
0.072 at VGS = 4.5 V
0.079 at VGS = 2.5 V
0.092 at VGS = 1.8 V
0.125 at VGS = 1.5 V
ID (A)a
2.9
2.8
2.6
2.2
Qg (Typ.)
3 nC
MICRO FOOT
Bump Side View
Backside View
SG
21
SD
34
Device Marking: xxx = Date/Lot Traceability Code
AJ
Ordering Information: Si8810EDB-T2-E1 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• Ultra Small 0.8 mm x 0.8 mm Outline
• Ultra Thin 0.357 mm Height
• Typical ESD Protection 2000 V (HBM)
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Portable Devices such as Cell Phones,
Smart Phones and Tablet PCs
- Load Switch
- Small Signal Switch
- High Speed Switching
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TA = 25 °C
TA = 25 °C
TA = 25 °C
Maximum Power Dissipation
TA = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20
±8
2.9a
2.3a
2.1b
1.7b
15
0.7a
0.4b
0.9a
0.6a
0.5b
0.3b
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, d
Maximum Junction-to-Ambientb, e
t5s
Symbol
RthJA
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
Typical
105
200
Maximum
135
260
Unit
V
A
W
°C
Unit
°C/W
Document Number: 62829
For technical questions, contact: [email protected]
www.vishay.com
S13-0198-Rev. A, 28-Jan-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
Si8810EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
Limited by RDS(on)*
10
100 µs
1
1 ms
0.1
TA = 25 °C
0.01
0.1
BVDSS Limited
1 10
100 ms
10 s
1 s, 10 ms
DC
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
3.0 0.8
2.5
0.6
2.0
1.5 0.4
1.0
0.2
0.5
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Current Derating*
Note:
When mounted on 1" x 1" FR4 with full copper.
150
0.0
25
50 75 100 125
TA - Ambient Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62829
For technical questions, contact: [email protected]
www.vishay.com
S13-0198-Rev. A, 28-Jan-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet Si8810EDB.PDF ] | |
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