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PDF Si8812DB Data sheet ( Hoja de datos )
| Número de pieza | Si8812DB | |
| Descripción | N-Channel 20 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
N-Channel 20 V (D-S) MOSFET
Si8812DB
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
20
RDS(on) () Max.
0.059 at VGS = 4.5 V
0.061 at VGS = 3.7 V
0.065 at VGS = 2.5 V
0.085 at VGS = 1.8 V
ID (A)a
3.2
3.1
3.0
2.7
Qg (Typ.)
6.3 nC
MICRO FOOT
Bump Side View
Backside View
SG
21
FEATURES
• TrenchFET® Power MOSFET
• Small 0.8 mm x 0.8 mm Outline Area
• Low 0.4 mm max. profile
• Low On-Resistance
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load Switch with Low Voltage Drop
• Power Management
• For Smart Phones, Tablet PCs,
Mobile Computing
D
SD
34
Device Marking: xxx = Date/Lot Traceability Code
AG = Device Marking Code
Ordering Information: Si8812DB-T2-E1 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TA = 25 °C
TA = 25 °C
TA = 25 °C
Maximum Power Dissipation
TA = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20
±8
3.2a
2.6a
2.3b
1.8b
20
0.7a
0.4b
0.9a
0.6a
0.5b
0.3b
- 55 to 150
260
G
S
N-Channel MOSFET
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, d
Maximum Junction-to-Ambientb, e
t5s
Symbol
RthJA
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
Typical
105
200
Maximum
135
260
Unit
°C/W
Document Number: 63682
For technical questions, contact: [email protected]
www.vishay.com
S12-2050-Rev. A, 27-Aug-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
4 0.8
Si8812DB
Vishay Siliconix
3 0.6
2 0.4
1 0.2
0
0 25 50 75 100 125
TA - Ambient Temperature (°C)
Current Derating*
Note:
When mounted on 1" x 1" FR4 with full copper.
150
0.0
25
50 75 100 125
TA - Ambient Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63682
For technical questions, contact: [email protected]
www.vishay.com
S12-2050-Rev. A, 27-Aug-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet Si8812DB.PDF ] | |
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