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PDF SiS612EDNT Data sheet ( Hoja de datos )
| Número de pieza | SiS612EDNT | |
| Descripción | N-Channel 20 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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www.vishay.com
SiS612EDNT
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
20
RDS(on) () Max.
0.0039 at VGS = 4.5 V
0.0042 at VGS = 3.7 V
0.0058 at VGS = 2.5 V
ID (A)f, g
50
50
50
Qg (Typ.)
22.5 nC
Thin PowerPAK® 1212-8
3.30 mm
S
1S
3.30 mm
2
S
3G
4
0.75 mm
D
8D
7
D
6
D
5
Bottom View
Ordering Information:
SiS612EDNT-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Low Thermal Resistance PowerPAK Package
with Small Size and 0.75 mm Profile
• Typical ESD performance 3400 V
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Battery Switch / Load Switch
• Power Management for Tablet PCs
and Mobile Computing
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TJ, Tstg
Limit
20
± 12
50g
50g
24.6a, b
19.7a, b
200
43.3
3.1a, b
20
20
52
33
3.7a, b
2.4a, b
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, e
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
24
1.9
Maximum
33
2.4
Unit
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 81 °C/W.
f. Based on TC = 25 °C.
g. Package limited.
S13-1675-Rev. A, 29-Jul-13
1
Document Number: 62874
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1000
90
SiS612EDNT
Vishay Siliconix
100
Limited by RDS(on)*
100 μs
10 1 ms
10 ms
1 100 ms
10s, 1 s
0.1 DC
0.01
TA = 25 °C
BVDSS Limited
0.1 1 10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
64
72
54
Package Limited
36
18
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
48
32
16
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S13-1675-Rev. A, 29-Jul-13
5
Document Number: 62874
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SiS612EDNT.PDF ] | |
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