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PDF SiE822DF Data sheet ( Hoja de datos )
| Número de pieza | SiE822DF | |
| Descripción | N-Channel 20 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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N-Channel 20-V (D-S) MOSFET
SiE822DF
Vishay Siliconix
PRODUCT SUMMARY
ID (A)a
VDS (V)
RDS(on) (Ω)
Silicon Package
Limit Limit Qg (Typ.)
0.0034 at VGS = 10 V 138
20
0.0055 at VGS = 4.5 V 108
50
24 nC
50
Package Drawing
www.vishay.com/doc?73398
10 9 8
D GS
PolarPAK
76
SD
67
8 9 10
D D S GD
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Ultra Low Thermal Resistance Using Top-
Exposed PolarPAK® Package for Double-
Sided Cooling
• Leadframe-Based New Encapsulated Package
- Die Not Exposed
- Same Layout Regardless of Die Size
• Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
• 100 % Rg and UIS Tested
• Compliant to RoHS directive 2002/95/EC
APPLICATIONS
• VRM
• DC-DC Conversion
• Synchronous Rectification
D
G
D GS S D
1 23 4 5
54
32 1
Top View
Bottom View
Top surface is connected to pins 1, 5, 6, and 10
Ordering Information: SiE822DF-T1-E3 (Lead (Pb)-free)
SiE822DF-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
For Related Documents
www.vishay.com/ppg?74451
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
20
± 20
V
TC = 25 °C
138 (Silicon Limit)
50a (Package Limit)
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
50a
31b, c
24.8b, c
80
50a
4.3b, c
30
45
104
66
5.2b, c
3.3b, c
- 55 to 150
260
A
mJ
W
°C
Notes:
a. Package limited is 50 A.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 74451
S09-1338-Rev. B, 13-Jul-09
www.vishay.com
1
1 page  
SiE822DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
160 120
140
100
120
80
100
80 60
60 Package Limited
40
20
40
20
0
0 25 50 75 100 125 150
0
25
TC - Case Temperature (°C)
Current Derating*
50 75 100 125
TC - Case Temperature (°C)
Power Derating, Junction-to-Case
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74451
S09-1338-Rev. B, 13-Jul-09
www.vishay.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SiE822DF.PDF ] | |
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