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PDF Si8466EDB Data sheet ( Hoja de datos )
| Número de pieza | Si8466EDB | |
| Descripción | N-Channel 8 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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N-Channel 8 V (D-S) MOSFET
Si8466EDB
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.043 at VGS = 4.5 V
8 0.046 at VGS = 2.5 V
0.060 at VGS = 1.5 V
0.090 at VGS = 1.2 V
ID (A)a, e
5.4
5.2
4.6
3.0
Qg (Typ.)
6.8 nC
MICRO FOOT
Bump Side View
Backside View
SG
21
SD
34
Device Marking: 8466
xxx = Date/Lot Traceability Code
Ordering Information:
Si8466EDB-T2-E1 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• Typical ESD protection 3000 V HBM
• Ultra-Small 1 mm x 1 mm maximum Outline
• Ultra-Thin 0.548 mm maximum height
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Low On-Resistance Load Switch
for Portable Devices
- Low Power Consumption,
Low Voltage Drop
- Increased Battery Life
- Space Savings on PCB
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Package Reflow Conditionsc
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
VPR
IR/Convection
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
8
±5
5.4a
4.4a
3.6b
2.9b
20
1.5a
0.65b
1.8a
1.1a
0.78b
0.5b
- 55 to 150
260
260
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s.
c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on TA = 25 °C.
Unit
V
A
W
°C
Document Number: 63683
For technical questions, contact: [email protected]
www.vishay.com
S12-2183-Rev. A, 10-Sep-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
Si8466EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.120
TJ = 150 °C
10
0.100
0.080
ID = 2 A
0.060
TJ = 25 °C
TJ = 125 °C
1 0.040
TJ = 25 °C
0.020
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.000
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
25
0.7
0.6
0.5
ID = 250 μA
0.4
20
15
10
0.3 5
0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
0
0.001 0.01 0.1 1 10 100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
10
1
0.1
TA = 25 °C
100 µs
1 ms
10 ms
100 ms
10 s, 1s
DC
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 63683
For technical questions, contact: [email protected]
www.vishay.com
S12-2183-Rev. A, 10-Sep-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet Si8466EDB.PDF ] | |
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