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PDF Si8472DB Data sheet ( Hoja de datos )
| Número de pieza | Si8472DB | |
| Descripción | N-Channel 20 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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N-Channel 20-V (D-S) MOSFET
Si8472DB
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.044 at VGS = 4.5 V
20 0.050 at VGS = 2.5 V
0.056 at VGS = 1.8 V
0.070 at VGS = 1.5 V
ID (A)a, e
4.5
4.2
4.0
1.5
Qg (Typ.)
6.8 nC
MICRO FOOT
Bump Side View
Backside View
SG
21
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Baseband Switch
• DC/DC Conversion
- Boost Converters
• Smart Phones, Portable Media Players
D
SD
34
Device Marking: 8472
xxx = Date/Lot Traceability Code
Ordering Information: Si8472DB-T2-E1 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Package Reflow Conditionsc
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
VPR
IR/Convection
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20
±8
4.5a
3.6a
3.3b
2.6b
20
1.5a
0.65b
1.8a
1.1a
0.78b
0.5b
- 55 to 150
260
260
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on TA = 25 °C.
Unit
V
A
W
°C
Document Number: 63300
www.vishay.com
S11-1387-Rev. A, 11-Jul-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.10
10
TJ = 150 °C
1 TJ = 25 °C
0.08
0.06
0.04
0.02
Si8472DB
Vishay Siliconix
ID = 1.5 A
TJ = 125 °C
TJ = 25 °C
0.1
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.00
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.8 25
0.7
0.6
ID = 250 μA
0.5
0.4
0.3
20
15
10
5
0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
1
0
0.001 0.01 0.1 1 10 100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100 μs
1 ms
0.1
TA = 25 °C
10 ms
100 ms
10 s, 1 s
DC
0.01
0.1
BVDSS Limited
1 10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 63300
www.vishay.com
S11-1387-Rev. A, 11-Jul-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet Si8472DB.PDF ] | |
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