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PDF SiA537EDJ Data sheet ( Hoja de datos )
| Número de pieza | SiA537EDJ | |
| Descripción | N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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SiA537EDJ
Vishay Siliconix
N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () MAX.
0.028 at VGS = 4.5 V
N-Channel 12 0.033 at VGS = 2.5 V
0.042 at VGS = 1.8 V
0.054 at VGS = -4.5 V
P-Channel -20 0.070 at VGS = -2.5 V
0.104 at VGS = -1.8 V
0.165 at VGS = -1.5 V
ID (A)
4.5 a
4.5 a
4.5 a
-4.5 a
-4.5 a
-4.5 a
-1.5
Qg (TYP.)
6.2 nC
9.5 nC
PowerPAK® SC-70-6L Dual
D1
G2 6
S2 5
4
D2
D1
FEATURES
• TrenchFET® Power MOSFETs
• Typical ESD protection: N-channel 2400 V
P-channel 2000 V
• 100 % Rg tested
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Portable devices such as smart phones, tablet PCs and
mobile computing
- Load switches
- Power management
- DC/DC converters
D1 S2
1 2.05 mm
Top View
2
3 G1
D2
Bottom View
1
S1
G1
G2
Marking Code: EK
Ordering Information:
SiA537EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs)
Source Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d,e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
12 -20
±8
4.5 a
-4.5 a
4.5 a
-4.5 a
4.5 a,b,c
-4.5 a,b,c
4.5 a,b,c
-4.5 a,b,c
20 -15
4.5 a
-4.5 a
1.6 b,c
-1.6 b,c
7.8 7.8
55
1.9 b,c
1.9 b,c
1.2 b,c
1.2 b,c
-55 to 150
260
UNIT
V
A
W
°C
S13-2635-Rev. A, 30-Dec-13
1
Document Number: 62934
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
SiA537EDJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8 1.5
ID = 6.8 A
6
VDS = 6 V
1.4
VGS = 1.8 V; ID = 2.5 A
1.3
1.2
4
VDS = 3 V
VDS = 9.6 V
1.1
1.0 VGS = 4.5 V, 2.5 V; ID = 5.5 A
2 0.9
0.8
0
0 4 8 12
Qg - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25
0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
100 0.08
10
TJ = 150 °C
TJ = 25 °C
1
0.06 ID = 2.5 A; TJ = 125 °C
ID = 5.2 A; TJ = 125 °C
0.04
ID = 2.5 A;
TJ = 25 °C
0.02 ID = 5.2 A; TJ = 25 °C
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source-Drain Diode Forward Voltage
0.00
0
1234
VGS - Gate-to-Source Voltage (V)
5
On-Resistance vs. Gate-to-Source Voltage
0.8 20
0.7
ID = 250 µA
0.6
15
0.5 10
0.4
5
0.3
0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
0
0.001
0.01
0.1 1 10
Pulse (s)
100 1000
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
S13-2635-Rev. A, 30-Dec-13
5
Document Number: 62934
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
www.vishay.com
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiA537EDJ
Vishay Siliconix
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
10-4
10-3
Notes:
PDM
10-2
10-1
1
Square Wave Pulse Duration (s)
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 110 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
Square Wave Pulse Duration (s)
10-2
Normalized Thermal Transient Impedance, Junction-to-Case
10-1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62934.
S13-2635-Rev. A, 30-Dec-13
11
Document Number: 62934
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet SiA537EDJ.PDF ] | |
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