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PDF Si8802DB Data sheet ( Hoja de datos )
| Número de pieza | Si8802DB | |
| Descripción | N-Channel 8 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
N-Channel 8 V (D-S) MOSFET
Si8802DB
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
8
RDS(on) ()
0.054 at VGS = 4.5 V
0.060 at VGS = 2.5 V
0.068 at VGS = 1.8 V
0.086 at VGS = 1.5 V
0.135 at VGS = 1.2 V
ID (A)a
3.5
3.3
3.1
2.3
1
Qg (Typ.)
4.3 nC
MICRO FOOT
Bump Side View
Backside View
SG
21
SD
34
Device Marking: xxx = Date/Lot Traceability Code
AB
Ordering Information:
Si8802DB-T2-E1 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• Small 0.8 mm x 0.8 mm Outline Area
• Low 0.4 mm max. profile
• Low On-Resistance
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load Switch with Low Voltage Drop
• Load Switch for 1.2 V, 1.5 V, 1.8 V
Power Lines
• Smart Phones, Tablet PCs, Portable
Media Players
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
Continuous Source-Drain Diode Current
TA = 25 °C
TA = 25 °C
TA = 25 °C
Maximum Power Dissipation
TA = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c
IS
PD
TJ, Tstg
Limit
8
±5
3.5a
2.8a
3b
2.4b
15
0.7a
0.4b
0.9a
0.6a
0.5b
0.3b
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, d
Maximum Junction-to-Ambientb, e
t5s
Symbol
RthJA
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
Typical
105
200
Maximum
135
260
Unit
°C/W
Document Number: 67999
For technical questions, contact: [email protected]
www.vishay.com
S12-1620-Rev. B, 09-Jul-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.5 0.8
3
0.6
2.5
2
0.4
1.5
1 0.2
0.5
0
0 25 50 75 100 125
TA - Ambient Temperature (°C)
Current Derating*
Note:
When mounted on 1" x 1" FR4 with full copper.
150
0.0
25
Si8802DB
Vishay Siliconix
50 75 100 125
TA - Ambient Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67999
For technical questions, contact: [email protected]
www.vishay.com
S12-1620-Rev. B, 09-Jul-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet Si8802DB.PDF ] | |
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