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PDF MDF9N60 Data sheet ( Hoja de datos )
| Número de pieza | MDF9N60 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MDF9N60 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MDF9N60
N-Channel MOSFET 600V, 9A, 0.75Ω
General Description
The MDF9N60 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent quality.
MDF9N60 is suitable device for SMPS, high Speed switching
and general purpose applications.
Features
VDS = 600V
VDS = 660V
ID = 9.0A
RDS(ON) ≤ 0.75Ω
Applications
@ Tjmax
@ VGS = 10V
@ VGS = 10V
Power Supply
PFC
High Current, High Speed Switching
G DS
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Characteristics
Continuous Drain Current (※)
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy EAR(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
※ Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VDSS @ Tjmax
VGSS
ID
IDM
PD
EAR
Dv/dt
EAS
TJ, Tstg
Rating
600
660
±30
9.0
5.7
32
48
0.38
4.8
4.5
480
-55~150
Unit
V
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Nov 2009. Version 2.2
1
Symbol
RθJA
RθJC
Rating
62.5
2.62
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 page  
Physical Dimensions
3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified
S y mbol
A
b
b1
C
D
E
e
F
G
L
L1
Q
Q1
￠R
M in
4 .5 0
0 .6 3
1 .1 5
0 .3 3
1 5 .4 7
9 .6 0
2 .3 4
6 .4 8
1 2 .2 4
2 .7 9
2 .5 2
3 .1 0
3 .0 0
Nom
2 .5 4
Max
4 .9 3
0 .9 1
1 .4 7
0 .6 3
1 6 .1 3
1 0 .7 1
2 .8 4
6 .9 0
1 3 .7 2
3 .6 7
2 .9 6
3 .5 0
3 .5 5
Nov 2009. Version 2.2
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDF9N60.PDF ] | |
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