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Número de pieza | IRFH7004TRPBF | |
Descripción | HEXFET Power MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
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IRFH7004PbF
Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
l DC/AC Inverters
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l RoHS Compliant containing no Lead, no Bromide,
and no Halogen
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
40V
1.1mΩ
1.4mΩ
c259A
100A
PQFN 5X6 mm
Base Part Number
IRFH7004PBF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH7004TRPBF
6.0
ID = 100A
4.0
TJ = 125°C
2.0
TJ = 25°C
0.0
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2013 International Rectifier
300
250
Limited By Package
200
150
100
50
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
June 7, 2013
1 page IRFH7004PbF
10000
1000
100
10
TJ = 150°C
TJ = 25°C
VGS = 0V
1.0
0.0 0.5 1.0 1.5 2.0 2.5
VSD, Source-to-Drain Voltage (V)
Fig 9. Typical Source-Drain Diode
Forward Voltage
49
Id = 1.0mA
48
47
46
45
44
43
42
41
40
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 11. Drain-to-Source Breakdown Voltage
40
30
20
10000
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
10
Limited by
package
1msec
10msec
1
DC
0.1 Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.1 1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 10. Maximum Safe Operating Area
1.0
VDS= 0V to 32V
0.8
0.6
0.4
0.2
0.0
0
5 10 15 20 25 30 35 40
VDS, Drain-to-Source Voltage (V)
Fig 12. Typical COSS Stored Energy
VGS = 5.0V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS =10V
10
0
0 200 400 600 800 1000 1200 1400
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5 www.irf.com © 2013 International Rectifier
June 7, 2013
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRFH7004TRPBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFH7004TRPBF | HEXFET Power MOSFET | International Rectifier |
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