|
|
PDF IXFL82N60P Data sheet ( Hoja de datos )
| Número de pieza | IXFL82N60P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IXFL82N60P (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
PolarHVTM HiPerFET
Power MOSFET
ISOPLUS264TM
(Electrically Isolated Back Surface)
IXFL 82N60P
VDSS = 600 V
ID25 = 82 A
≤RDS(on) 78 mΩ
trr ≤ 200 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings ISOPLUS264 TM (IXFL)
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
FC
Weight
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
Continuous
Transient
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS,
TJ ≤150° C, RG = 2 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
600
600
±30
±40
55
200
82
100
5
20
625
-55 ... +150
150
-55 ... +150
300
50/60 Hz, RMS
IISOL ≤1 mA
Mounting force
t = 1 min
t=1s
2500
3000
28..150 / 6.4..30
10
V
V
V
G
D
VS
(Isolated Tab)
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
V~
N/lb
G = Gate
S = Source
D = Drain
Features
l International standard isolated
package
l UL recognized package
l Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
l Fast intrinsic diode
g Advantages
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 3 mA
VGS(th)
VDS = VGS, ID = 8 mA
IGSS VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT, Note 1
Characteristic Values
Min. Typ. Max.
600 V
l Easy to mount
l Space savings
l High power density
3.0 5.0 V
±200 nA
TJ = 125° C
25 µA
1000 µA
78 m Ω
© 2006 IXYS All rights reserved
DS99531E(02/06)
1 page  
IXFL 82N60P
1.000
0.100
0.010
0.001
0.0001
Fig. 13. Maximum Transient Thermal Resistance
0.001
0.01 0.1
Pulse W idth - Seconds
1
10
© 2006 IXYS All rights reserved
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXFL82N60P.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IXFL82N60P | Power MOSFET ( Transistor ) | IXYS Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |