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PDF SP2102 Data sheet ( Hoja de datos )
| Número de pieza | SP2102 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SP2102 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP2102
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
100V
2.0A
216 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
D1 D1 D2 D2
DFN 3x3
PIN1
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a e
TA=25°C
TA=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
100
±20
2.0
1.6
13
16
1.47
0.94
-55 to 150
85
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Jan,03,2014
www.samhop.com.tw
1 page  
SP2102
Ver 1.0
V DS
L
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VDD
Unclamped Inductive Test Circuit
F igure 13a.
V( BR )D S S
tp
IAS
Unclamped Inductive Waveforms
F igure 13b.
10
1
0.1
0.01
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
P DM
t1
t2
1. R ӰJA (t)=r (t) * R ӰJA
2. R ӰJA=S ee Datas heet
3. T J M-T A = P DM* R ӰJ A (t)
4. Duty C ycle, D=t1/t2
10 100 1000
Jan,03,2014
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SP2102.PDF ] | |
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