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PDF STA6620 Data sheet ( Hoja de datos )
| Número de pieza | STA6620 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
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S TA6620
S amHop Microelectronics C orp.
Nov. 24 2006
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m Ω ) Max
40V 7A
25 @ VGS = 10V
42 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
E S D P rotected.
D1 D1 D2 D2
8765
P DIP -8
1
1234
S1 G1 S2 G2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS 40
V
Gate-S ource Voltage
VGS 20 V
a
Drain C urrent-C ontinuous @ Ta
-P ulsed b
25 C
70 C
ID
IDM
7
5.9
30
A
A
A
Drain-S ource Diode Forward C urrent a IS 1.7
A
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
Ta= 25 C
Ta=70 C
PD
TJ, TSTG
3
2
-55 to 150
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a R JA 41.5 C/W
1
1 page  
S TA6620
1200
1000
800
600
C is s
400
6 200 C oss
C rss
0
0 5 10 15 20 25 30
V DS , Drain-to S ource Voltage (V )
F igure 9. C apacitance
10
VDS =20V
8 ID=7A
6
4
2
0
0 2 4 6 8 10 12 14 16
Qg, T otal G ate C harge (nC )
F igure 10. G ate C harge
250
100
60
10
TD(off)
Tr
TD(on)
Tf
V DS =20V ,ID=7A
1 V G S =10V
1 6 10 60 100 300 600
R g, G ate R es is tance (Ω)
F igure 11.s witching characteris tics
9
50
30
10
R DS(ON) Limit
1
10ms
100ms
1s
DC
0.1 VGS =10V
S ingle P ulse
0.03 TA=25 C
0.1 1
10 40
V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
O perating Area
1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
P DM
t1
t2
1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
10 100
1000
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet STA6620.PDF ] | |
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