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PDF STS4300 Data sheet ( Hoja de datos )
| Número de pieza | STS4300 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STS4300 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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S amHop Microelectronics C orp.
S T S 4300Green
Product
APR .25 2006
N-C hannel E nhancement Mode Field E ffect Trans is tor
P R ODUC T S UMMAR Y
VDS S
40V
ID
3.5A
R DS (ON) ( m Ω ) Max
62 @ VGS = 10V
80 @ V G S =4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S OT-23 package.
S OT-23
D
S
G
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS 40
V
Gate-S ource Voltage
VGS 20
V
Drain C urrent-C ontinuous @ Ta
-P ulsed a
25 C
70 C
ID
IDM
3.5
2.7
15
A
A
A
Drain-S ource Diode Forward C urrent
IS 1.25
A
Maximum P ower Dissipation
Operating Junction and S torage
Temperature R ange
Ta= 25 C
Ta=70 C
PD
TJ, TSTG
1.25
0.76
-55 to 150
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a R JA
100 C/W
1
1 page  
S TS 4300
420
C is s
350
280
210
140
6 C oss
70
C rss
0
05
10 15
20 25 30
V DS , Drain-to S ource Voltage (V )
F igure 9. C apacitance
220
100
60
10
T D(on)
Tf
T D(off)
Tr
V DS =15V ,ID=1A
1 V G S =10V
1 6 10 60 100 300 600
R g, G ate R es is tance (Ω)
F igure 11.s witching characteris tics
10
VDS =15V
8 ID=3.5A
6
4
2
0
0 1 2 3 4 5 6 78
Qg, T otal G ate C harge (nC )
50
10 R DS(ON) Limit
1
1ms
10ms
1s
DC
0.1 VGS =10V
S ingle P ulse
0.03 Tc=25 C
0.1 1
10 20 50
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STS4300.PDF ] | |
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