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PDF STT3458N Data sheet ( Hoja de datos )
| Número de pieza | STT3458N | |
| Descripción | N-Channel Enhancement Mode Mos.FET | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
STT3458N
3.4 A, 60 V, RDS(ON) 92 m
N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize
High Cell Density process. Low RDS(on) assures minimal
power loss and conserves energy, making this device
ideal for use in power management circuitry. Typical
applications are power switch, power management
in portable and battery-powered products such as
computers, printers, PCMCIA cards, cellular and
cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life.
Low gate charge
Fast switch
Miniature TSOP-6 surface mount package
saves board space
PACKAGE INFORMATION
Package
MPQ
TSOP-6
3K
LeaderSize
7’ inch
TSOP-6
A
E
L
654
B
123
F
DG
K
C
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
DD
DD
GS
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
Operating Junction and Storage Temperature Range
TA= 25°C
TA= 70°C
TA= 25°C
TA= 70°C
VDS
VGS
ID
IDM
IS
PD
Tj, Tstg
Thermal Resistance Ratings
Maximum Junction to Ambient 1
t ≦ 5 sec
Steady State
RJA
Notes
1.
2.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
Ratings
60
±20
3.4
2.7
±15
1.7
2
1.3
-55 ~ 150
62.5
110
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
30-Dec-2010 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet STT3458N.PDF ] | |
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