(PDF) AP4425GO Datasheet - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Número de pieza	AP4425GO
Descripción	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes	Advanced Power Electronics
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No Preview Available ! Advanced Power Electronics Corp. AP4425GO RoHS-compliant Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Small & Thin Package ▼ Fast Switching Characteristic ▼ Capable of 1.8V Gate Drive S D D S TSSOP-8 G S S D Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. BVDSS RDS(ON) ID -20V 42mΩ -4.2A D G S Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃W Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rthj-L Thermal Resistance Junction-lead Rating - 20 ±8 -4.2 -3.3 -30 1 0.01 -55 to 150 -55 to 150 Units V V A A A W/℃ ℃ ℃ Max. Max. Value 120 70 Unit ℃/W ℃/W Data and specifications subject to change without notice 200312072-1/4 1 page

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PDF Descargar	[ Datasheet AP4425GO.PDF ]

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PDF AP4425GO Data sheet ( Hoja de datos )