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PDF AP730P-HF-3 Data sheet ( Hoja de datos )
| Número de pieza | AP730P-HF-3 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP730P-HF-3
N-channel Enhancement-mode Power MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
D
Fast Switching Performance
RoHS-compliant, halogen-free
G
S
BV DSS
RDS(ON)
ID
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP730P-HF-3 is in the TO-220 package, which is widely used
for commercial and industrial applications, and is well-suited for
high voltage applications such as switch mode power supplies, DC-AC
converters and high-current high-speed switching circuits.
G
D
S
400V
1.0Ω
5.5A
TO-220 (P)
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
EAS
IAR
EAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance Junction-case
Maximum Thermal Resistance Junction-ambient
Rating
400
±30
5.5
3.5
23
74
0.59
260
5.5
7
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
mJ
A
mJ
°C
°C
Value
1.7
62
Unit
°C/W
°C/W
Ordering Information
AP730P-HF-3TB
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
RoHS-compliant halogen-free TO-220, shipped in tubes
200302192-3 1/7
1 page  
Advanced Power
Electronics Corp.
Typical Electrical Characteristics (cont.)
AP730P-HF-3
16
I D =5.5A
14
12
10
8
V DS =80V
V DS =120V
V DS =160V
6
4
2
0
0 5 10 15 20 25 30 35 40 45 50
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
10000 f=1.0MHz
Ciss
100
Coss
Crss
1
1 11 21 31
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j = 150 o C
1
T j = 25 o C
0.1
0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
3.6
3.1
2.6
2.1
1.6
-50
0 50 100
T j , Junction Temperature ( o C )
150
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
5/7
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