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PDF AP40T10GI Data sheet ( Hoja de datos )
| Número de pieza | AP40T10GI | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP40T10GI
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
▼ Single Drive Requirement
D
▼ Fast Switching Characteristic
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
BVDSS
RDS(ON)
ID
100V
36mΩ
40A
GD S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
PD@TC=25℃
Total Power Dissipation
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Rating
100
+20
40
27
150
37.5
-55 to 175
-55 to 175
Value
4.0
65
Units
V
V
A
A
A
W
℃
℃
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
200810031
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP40T10GI.PDF ] | |
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