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PDF AP95T08GP Data sheet ( Hoja de datos )

Número de pieza AP95T08GP
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP95T08GP Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP95T08GP
Preliminary
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower On-resistance
Fast Switching Characteristic
RoHS Compliant
G
D
S
Description
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-
industrial power applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
G
D
S
80V
7mΩ
80A
TO-220(P)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V3
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
80
±20
80
70
320
300
2
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
0.5
62
Units
/W
/W
Data and specifications subject to change without notice
200606071pre-1/4

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