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Número de pieza | AP50T10GM-HF | |
Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AP50T10GM-HF (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Advanced Power
Electronics Corp.
AP50T10GM-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Surface Mount Package
▼ Halogen Free & RoHS Compliant Product
G
Description
AP50T10 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
D BVDSS
RDS(ON)
ID
S
D
D
D
D
SO-8
100V
30mΩ
6.5A
G
SS
S
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
100 V
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
+20 V
6.5 A
5.2 A
24 A
2.5 W
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance Junction-ambient3
Data and specifications subject to change without notice
Value
50
Unit
℃/W
1
201501124
1 page MARKING INFORMATION
AP50T10GM-HF
50T10GM
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet AP50T10GM-HF.PDF ] |
Número de pieza | Descripción | Fabricantes |
AP50T10GM-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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