(PDF) HAT2024R Datasheet - Silicon N Channel Power MOS FET High Speed Power Switching

Número de pieza	HAT2024R
Descripción	Silicon N Channel Power MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! HAT2024R Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting Outline ADE-208-494 C (Z) 4th. Edition July 1997 SOP–8 78 DD 8 7 65 1 234 56 DD 24 GG S1 MOS1 S3 MOS2 1, 3 S 2, 4 G 5, 6, 7, 8 Dra 1 page HAT2024R Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.5 Pulse Test 0.4 0.3 I D = 5 A 0.2 2A 0.1 1A 0 2 4 6 8 10 Gate to Source Voltage V G(SV) Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature 0.20 Pulse Test 0.16 0.12 0.08 0.04 0 –40 2A ID= 5 A 1A VGS = 4 V 10 V 1 A, 2 A, 5 A 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 20 10 Tc = –25 °C 25 °C 5 2 75 °C 1 0.5 0.2 0.1 0.2 VDS = 10 V Pulse Test 0.5 1 2 5 10 20 Drain Current I D (A) 5 5 Page

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PDF HAT2024R Data sheet ( Hoja de datos )