(PDF) HAT2022R Datasheet - Silicon N Channel Power MOS FET High Speed Power Switching

Número de pieza	HAT2022R
Descripción	Silicon N Channel Power MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! HAT2022R Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting Outline ADE-208-440 J (Z) 11th Edition February 1999 SOP–8 8 7 65 56 7 8 DD D D 1 234 4 G SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 1 page HAT2022R Body–Drain Diode Reverse Recovery Time 500 200 100 50 20 10 5 0.2 di/dt = 20 A/µs VGS = 0, Ta = 25°C 0.5 1 2 5 10 20 Reverse Drain Current I DR (A) 10000 Typical Capacitance vs. Drain to Source Voltage 3000 1000 300 100 Ciss Coss Crss 30 VGS = 0 f = 1 MHz 10 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 50 I D = 11 A 40 V DD = 5 V 10 V 25 V 30 VDS 20 VGS 20 16 12 8 10 V DD = 25 V 10 V 4 5V 0 0 20 40 60 80 100 Gate Charge Qg (nc) 1000 500 200 100 50 Switching Characteristics tr tf t d(off) t d(on) 20 VGS = 4 V, V DD = 10 V PW = 3 µs, duty < 1 % 10 0.2 0.5 1 2 5 10 Drain Current I D (A) 20 5 5 Page

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PDF HAT2022R Data sheet ( Hoja de datos )