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PDF AP1003BST Data sheet ( Hoja de datos )
| Número de pieza | AP1003BST | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP1003BST (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Advanced Power
Electronics Corp.
AP1003BST
Preliminary
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lead-Free Package
▼ Low Conductance Loss
▼ Low Profile ( < 0.7mm )
D
G
S
Description
The AP1003BST used the latest APEC Power MOSFET silicon
technology with the advanced technology packaging to provide the
lowest on-resistance loss, low profile and dual sided cooling
compatible.
The GreenFETTM package is compatible with existing soldering
techniques and is ideal for power application, especially for high
frequency / high efficiency DC-DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
ID@TC=25℃
IDM
PD@TA=25℃
PD@TA=70℃
PD@TC=25℃
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V3
Continuous Drain Current, VGS @ 10V3
Continuous Drain Current, VGS @ 10V4
Pulsed Drain Current1
Total Power Dissipation3
Total Power Dissipation3
Total Power Dissipation4
Single Pulse Avalanche Energy5
Avalanche Current1
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
30V
4.7mΩ
17.3A
GreenFETTM
DG
S
S
D
Rating
30
+20
17.3
14.3
75
150
2.2
1.4
42
28.8
24
-40 to 150
-40 to 150
ST
Units
V
V
A
A
A
A
W
W
W
mJ
A
℃
℃
Thermal Data
Rthj-c
Maximum Thermal Resistance, Junction-ambient4
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
3 ℃/W
58 ℃/W
1
20100809pre
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP1003BST.PDF ] | |
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