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PDF AP1005BSQ Data sheet ( Hoja de datos )
| Número de pieza | AP1005BSQ | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP1005BSQ (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Advanced Power
Electronics Corp.
AP1005BSQ
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lead-Free Package
▼ Low Conductance Loss
▼ Low Profile ( < 0.7mm )
D
G
S
Description
The AP1005BSQ used the latest APEC Power MOSFET silicon
technology with the advanced technology packaging to provide the
lowest on-resistance loss, low profile and dual sided cooling
compatible.
The GreenFETTM package is compatible with existing soldering
techniques and is ideal for power application, especially for high
frequency / high efficiency DC-DC converters.
BVDSS
RDS(ON)
ID
25V
3.8mΩ
19A
GreenFETTM
DG
SD
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
ID@TC=25℃
IDM
PD@TA=25℃
PD@TA=70℃
PD@TC=25℃
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V3
Continuous Drain Current, VGS @ 10V3
Continuous Drain Current, VGS @ 10V4
Pulsed Drain Current1
Total Power Dissipation3
Total Power Dissipation3
Total Power Dissipation4
Single Pulse Avalanche Energy5
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
25
+20
19
15
84
150
2.2
1.4
41.7
28.8
24
-40 to 150
-40 to 150
SQ
Units
V
V
A
A
A
A
W
W
W
mJ
A
℃
℃
Thermal Data
Rthj-c
Maximum Thermal Resistance, Junction-case4
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
3 ℃/W
58 ℃/W
1
201009152
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP1005BSQ.PDF ] | |
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