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PDF AP3310GH-HF-3 Data sheet ( Hoja de datos )
| Número de pieza | AP3310GH-HF-3 | |
| Descripción | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP3310GH/J-HF-3
P-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Fast Switching Characteristics
2.5V Gate Drive Capability
RoHS-compliant, halogen-free
G
D
BV DSS
-20V
R DS(ON)
150mΩ
ID -10A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
GDS
TO-252 (H)
The AP3310GH-HF-3 is in the TO-252 package which is widely preferred for
commercial and industrial surface mount applications such as medium-power
DC/DC converters. The through-hole TO-251 version (AP3310GJ-HF-3) is
available where a small PCB footprint is required.
G
D
S
Absolute Maximum Ratings
TO-251 (J)
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
-20
±12
-10
-6.2
-24
25
0.2
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient(PCB mount)3
Maximum Thermal Resistance, Junction-ambient
Value
5.0
62.5
110
Ordering Information
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
AP3310GH-HF-3TR RoHS-compliant TO-252 shipped on tape and reel (3000 pcs/reel)
AP3310GJ-HF-3TB
RoHS-compliant TO-251 shipped in tubes
©2009 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200902096-3 1/8
1 page  
Advanced Power
Electronics Corp.
Typical Electrical Characteristics (cont.)
AP3310GH/J-HF-3
5
I D =-2.8A
V DS =-6V
4
3
2
1
f=1.0MHz
1000
Ciss
Coss
100
Crss
0
02468
Q G , Total Gate Charge (nC)
10
1 3 5 7 9 11 13
-V DS (V)
Fig 7. Gate Charge Characteristics
10
T j =150 o C
T j =25 o C
1
Fig 8. Typical Capacitance Characteristics
1.5
1
0.5
0
0.3 0.5 0.7 0.9 1.1 1.3 1.5
-V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
©2009 Advanced Power Electronics Corp. USA
www.a-powerusa.com
0
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
5/8
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