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PDF AP95T10GW-HF Data sheet ( Hoja de datos )
| Número de pieza | AP95T10GW-HF | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP95T10GW-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ RoHS Compliant & Halogen-Free
G
D
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-3P package is widely preferred for commercial-industrial
surface mount applications and suited for higher voltage applications
such as SMPS.
BVDSS
RDS(ON)
ID
G
D
S
100V
6.4mΩ
150A
TO-3P
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
ID@TC=25℃
IDM
PD@TC=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V(Silicon Limited)
Continuous Drain Current, VGS @ 10V(Silicon Limited)
Continuous Drain Current, VGS @ 10V(Package Limited)
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
100
+20
150
108
120
600
375
-55 to 175
-55 to 175
Units
V
V
A
A
A
A
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
0.4
40
Units
℃/W
℃/W
1
201202152
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP95T10GW-HF.PDF ] | |
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