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Número de pieza | AP85T08GP | |
Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AP85T08GP (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Advanced Power
Electronics Corp.
AP85T08GS/P
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
G
D
S
Description
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
80V
13mΩ
75A
GD
S TO-263(S)
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP85T08GP) are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy3
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
Rating
80
±20
75
48
260
138
1.11
450
30
-55 to 150
-55 to 150
TO-220(P)
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
0.9
62
Units
℃/W
℃/W
Data and specifications subject to change without notice
200912072-1/4
1 page ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-263
E
D
L2
e
b1
L3
b
L4
SYMBOLS
A
A1
A2
b
b1
c
c1
D
E
e
L2
L3
L4
Millimeters
MIN NOM MAX
4.25 4.75 5.20
0.00 0.15 0.30
2.20 2.45 2.70
0.70 0.90 1.10
1.07 1.27 1.47
0.30 0.45 0.60
1.15 1.30 1.45
8.30 8.90 9.40
9.70 10.10 10.50
2.04 2.54 3.04
----- 1.50 -----
4.50 4.90 5.30
----- 1.50 ----
A
c1
A2
cθ
A1
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-263
X8X5TX0X8XGS
YWWSSS
Part Number
Package Code
LOGO
meet Rohs requirement
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AP85T08GP.PDF ] |
Número de pieza | Descripción | Fabricantes |
AP85T08GP | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP85T08GP-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP85T08GP-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP85T08GS | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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