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PDF TPCP8008-H Data sheet ( Hoja de datos )
| Número de pieza | TPCP8008-H | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPCP8008-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPCP8008-H
High-Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 3.8 nC (typ.)
• Low drain-source ON-resistance:
RDS (ON) = 16 mΩ (typ.) (VGS = 4.5 V)
• High forward transfer admittance: |Yfs| = 26 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc = 25℃) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±20
8
32
1.68
0.84
42
8
0.11
150
−55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
0.33 ± 0.05
0.05 M A
85
Unit: mm
0.475 1
4
0.65
2.9 ± 0.1
B 0.05 M B
A
S
0.025 S
0.17 ± 0.02
0.8 ± 0.05
0.28
＋0.1
－0.11
1.12
＋0.13
－0.12
1.12
＋0.13
－0.12
0.28
＋0.1
－0.11
1,2,3 ：SOURCE
4 ：GATE
5,6,7,8：DRAIN
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-3V1K
Weight: 0.017g (typ.)
Circuit Configuration
8765
1234
Marking (Note 5)
8008H
1 2010-03-09
1 page  
RDS (ON) – Ta
30
Common source
Pulse test
25
ID = 2, 4, 8 A
20
15 VGS = 4.5 V
10
VGS = 10 V
5
ID = 2, 4, 8 A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPCP8008-H
IDR – VDS
100
10
3
10
4.5
1 VGS = 0 V
1
Common source
Ta = 25°C
Pulse test
0.1
0
−0.2
−0.4
−0.6
−0.8
−1 −1.2
Drain-source voltage VDS (V)
Capacitance – VDS
10000
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
1000
Ciss
100 Coss
Crss
10
0.1 1 10 100
Drain-source voltage VDS (V)
Vth – Ta
3
2.5
2
1.5
1
Common source
0.5 VDS = 10 V
ID = 0.1 mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
2
(1)
1.6
1.2
(2)
0.8
PD – Ta
(1)Device mounted on a glass-epoxy
board (a) (Note 2a)
(2)Device mounted on a glass-epoxy
board (b) (Note 2b)
t=5 s
0.4
0
0 40 80 120 160 200
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
50 Common source 20
ID = 8 A
Ta = 25°C
40
Pulse test
16
30
VDS = 24 V
20
12
10
6
6
12
VDD = 24 V
0
0 4 8 12
Total gate charge Qg (nC)
12
8
4
0
16
5 2010-03-09
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCP8008-H.PDF ] | |
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