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PDF TPCC8003-H Data sheet ( Hoja de datos )
| Número de pieza | TPCC8003-H | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TPCC8003-H (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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TPCC8003-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPCC8003-H
High-Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 4.2 nC (typ.)
• Low drain-source ON-resistance:
RDS (ON) = 14.3 mΩ (typ.) ( VGS = 4.5 V)
• High forward transfer admittance: |Yfs| = 33 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc = 25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc = 25℃) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
PD
EAS
IAR
EAR
Tch
Tstg
Note: For Notes 1 to 4, refer to the next page.
30
30
±20
13
39
22
1.9
0.7
44
13
1.12
150
−55 to 150
V
V
V
A
W
W
W
mJ
A
mJ
°C
°C
1,2,3:SOURCE 4:GATE
5,6,7,8:DRAIN
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-3X1A
Weight: 0.02 g (typ.)
Circuit Configuration
8765
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate
123
reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
4
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-07-15
1 page  
RDS (ON) – Ta
30
Common source
Pulse test
25
ID = 13 A
3.3, 6.5 A
20
15
VGS = 4.5 V
10
VGS = 10 V
5
ID = 3.3, 6.5, 13 A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPCC8003-H
100 Common source
Ta = 25°C
Pulse test
IDR – VDS
10
4.5
3
10
1
VGS = 0 V
1
0
−0.2
−0.4
−0.6
−0.8
−1.0
Drain-source voltage VDS (V)
10000
Capacitance – VDS
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
1000
Ciss
Coss
100
Crss
10
0.1
1 10
Drain-source voltage VDS (V)
100
Vth – Ta
2.5
2.0
1.5
1.0
Common source
0.5 VDS = 10 V
ID = 0.2 mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
30
VDS
20
10
Dynamic input/output
characteristics
12
VDD = 6 V
24
8
12
Common source
ID = 13 A
Ta = 25°C
4
Pulse test
00
0 4 8 12 16 20
Total gate charge Qg (nC)
5
2009-07-15
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCC8003-H.PDF ] | |
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