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PDF TPCA8008-H Data sheet ( Hoja de datos )
| Número de pieza | TPCA8008-H | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPCA8008-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ)
TPCA8008-H
High Speed Switching Applications
Switching Regulator Applications
DC/DC Converter Applications
Unit: mm
1.27 0.4±0.1
85
0.05 M A
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 3.7 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 0.47Ω (typ.)
• High forward transfer admittance: |Yfs| = 3.3S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 250 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
0.15±0.05
14
5.0±0.2
0.595
A
0.05 S
S
1
4
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc=25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25℃) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
PD
EAS
IAR
EAR
Tch
Tstg
Note: For Notes 1 to 4, refer to the next page.
Rating
250
250
±20
4
8
45
2.8
1.6
11
4
4.5
150
−55 to 150
Unit
V
V
V
A
W
W
W
mJ
A
mJ
°C
°C
4.25±0.2
8
1, 2, 3 : SOURCE
4 : GATE
5, 6, 7, 8 : DRAIN
5 0.8±0.1
JEDEC
―
JEITA
―
TOSHIBA
2-5Q1A
Weight: 0.069 g (typ.)
Circuit Configuration
8765
1234
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2007-12-18
1 page  
RDS (ON) – Ta
1.6
Common source
VGS = 10 V
Pulse test
1.2
0.8 ID = 4 A
2
0.4 1
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPCA8008-H
IDR – VDS
10
Common source
Ta = 25°C
Pulse test
1
10
5
3 1 VGS = 0 V
0.1
0
−0.2
−0.4
−0.6
−0.8
−1.0
Drain-source voltage VDS (V)
Capacitance – VDS
1000
Ciss
100 Coss
10
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
1
0.1 1
Crss
10 100
Drain-source voltage VDS (V)
Vth – Ta
4
3
2
Common source
1 VDS = 10 V
ID = 1 mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
Dynamic input/output
characteristics
300 24
200
100
0
0
20
VDS
16
100
50 12
VDS = 200 V
VGS
5
Common source 8
ID = 4 A
Ta = 25°C
Pulse test
4
0
10 15
Total gate charge Qg (nC)
5
2007-12-18
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCA8008-H.PDF ] | |
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