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PDF TK80X04K3 Data sheet ( Hoja de datos )
| Número de pieza | TK80X04K3 | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TK80X04K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TK80X04K3
Switching Regulator, DC-DC Converter Applications
Motor Drive Applications
• Low drain-source ON-resistance: RDS (ON) = 2.7 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 150 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
• Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
9.2 MAX.
7.0 ± 0.2
4
Unit: mm
0.4 ± 0.1
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
(Note 4)
Storage temperature range (Note 4)
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
40
40
±20
80
320
125
123
80
12.5
175
−55 to 175
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
2.0 1.5 2.0 2.5
12
3
1.0 ± 0.2 1.0 ± 0.2 3.6 ± 0.2
1. GATE ：G
2. N.C.
3. SOURSE ：S
4. DRAIN ：D
JEDEC
⎯
JEITA
SC-97
TOSHIBA
2-9F1C
Weight: 0.74 g (typ.)
Thermal Characteristics
4
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Rth (ch-c)
1.2
°C/W
1
Note 1: Ensure that the channel temperature does not exceed 175°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 20 μH, IAR = 80 A, RG = 25 Ω
3
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
Note 4: The definitions of the absolute maximum channel temperature and storage temperatures are based on
AEC-Q101.
Note 5:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2009-04-21
1 page  
TK80X04K3
10
3
1
Duty = 0.5
0.3 0.2
0.1
0.1 0.05
0.03
0.02
0.01
0.01
0.00001
0.0001
rth − tw
Single Pulse
PDM
t
T
Duty = t/T
Rth (ch-c) = 1.2°C/W
0.001
0.01
0.1
1
Pulse width tw (S)
10
Safe operating area
1000
ID max (pulsed) *
100 ID max (continuous)
1 00 μs *
10
DC operation
Tc = 25°C
1 ms *
1
0.1 *: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
0.1
1
VDSS max
10
Drain-source voltage VDS (V)
100
EAS – Tch
200
160
120
80
40
0
25 50
75 100 125 150 175
Channel temperature (initial) Tch (°C)
15 V
0V
Test circuit
RG = 25 Ω
VDD = 25 V, L = 20 μH
BVDSS
IAR
VDD
VDS
Wave form
EΕAS
=
1
2
⋅
L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2009-04-21
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TK80X04K3.PDF ] | |
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