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Número de pieza | TK70X06K3 | |
Descripción | Field Effect Transistor | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TK70X06K3 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TK70X06K3
Load switch Applications
Motor Drive Applications
• Low drain-source ON-resistance: RDS (ON) = 6.5 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 120 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
• Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
9.2 MAX.
7.0 ± 0.2
4
Unit: mm
0.4 ± 0.1
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
2.0 1.5 2.0 2.5
12
3
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
(Note 4)
Storage temperature range (Note 4)
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
60
60
±20
70
210
80
37
70
8
175
−55 to 175
V
V
V
A
W
mJ
A
mJ
°C
°C
1.0 ± 0.2 1.0 ± 0.2 3.6 ± 0.2
1. GATE :G
2. N.C.
3. SOURSE :S
4. DRAIN :D
JEDEC
JEITA
⎯
SC-97
TOSHIBA
2-9F1C
Weight: 0.74 g (typ.)
Note :
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Rth (ch-c) 1.875 °C/W
Note 1: Ensure that the channel temperature does not exceed 175°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 10 μH, IAR = 70 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
Note 4: 175°C refers to AEC-Q101.
This transistor is an electrostatic-sensitive device. Handle with care.
1
http://store.iiic.cc/
2009-11-17
1 page TK70X06K3
10
3
1
Duty = 0.5
0.3 0.2
0.1
0.1 0.05
0.03
0.02
0.01
0.01
0.00001
0.0001
rth − tw
Single Pulse
PDM
t
T
Duty = t/T
Rth (ch-c) = 1.875°C/W
0.001
0.01
0.1
1
10
Pulse width tw (s)
Safe operating area
1000
ID max (pulsed) *
100 ID max (continuous)
1 00 μs *
1 ms *
10
DC operation
Tc = 25°C
1
0.1 *: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
0.1
1
VDSS max
10 100
Drain-source voltage VDS (V)
EAS – Tch
60
50
40
30
20
10
0
25 50
75 100 125 150 175 200
Channel temperature (initial) Tch (°C)
15 V
0V
Test circuit
RG = 25 Ω
VDD = 25 V, L = 10 μH
BVDSS
IAR
VDD
VDS
Waveform
EΕAS
=
1
2
⋅
L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5
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2009-11-17
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet TK70X06K3.PDF ] |
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