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PDF TK70J04J3 Data sheet ( Hoja de datos )
| Número de pieza | TK70J04J3 | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TK70J04J3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅢ)
TK70J04J3
Motor Drive Application
Unit: mm
z Low drain-source ON resistance: RDS (ON) = 3.0 mΩ (typ.)
z High forward transfer admittance: |Yfs| = 120 S (typ.)
z Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
z Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature (Note 4)
Storage temperature range (Note 4)
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Thermal Characteristics
Rating
40
40
±20
70
280
150
528
70
15
175
−55~175
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain (Heat Sink)
3: Source
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-16C1B
Weight : 4.6 g (typ.)
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c)
Rth (ch−a)
1.0 °C / W
50 °C / W
Note 1: Please use devices on condition that the channel temperature is below 175°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 112 μH, RG = 25 Ω, IAR = 70A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
Note 4: The definition of maximum rating condition for both channel temperature
and storage temperature range are referred from AEC-Q101.
Note 5: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
http://store.iiic.cc/
2009-09-29
1 page  
TK70J04J3
rth – tw
10
1
Duty = 0.5
0.2
0.1
0.1 0.05
0.01
10 μ
0.02
0.01
100 μ
PDM
Single Pulse
t
T
Duty = t/T
Rth (ch-c) = 1.0°C/W
1m
10 m
100 m
1
Pulse width tw (S)
10
Safe operating area
1000
ID max (Pulse) *
100 ID max (continuous)
1 ms *
100 μs
DC operation
10 Tc = 25°C
1
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
0.1
0.1
1
VDSS max
10
Drain-source voltage VDS (V)
100
EAS – Tch
600
500
400
300
200
100
0
25 50
75 100 125 150 175 180
Channel temperature (initial) Tch (°C)
15 V
0V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 25 V, L = 112 μH
Wave form
ΕAS
=
1
2
⋅L ⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5
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2009-09-29
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TK70J04J3.PDF ] | |
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