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PDF TK60D08J1 Data sheet ( Hoja de datos )
| Número de pieza | TK60D08J1 | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TK60D08J1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ)
TK60D08J1
Switching Regulator Application
• High-Speed switching
• Small gate charge: Qg = 86 nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 120 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 75 V)
• Enhancement-mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
75
75
±20
60
240
140
498
60
9.2
150
−55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
-
JEITA
-
TOSHIBA
2-10V1A
Weight: 1.35 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability
test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
0.89
83.3
°C/W
°C/W
Note 1: Ensure that the channel & lead temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C, L = 200 μH, IAR = 60 A, RG = 1Ω
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Handle with care.
Internal Connection
2
1
3
1 2009-09-29
1 page  
TK60D08J1
rth − tw
10
1
Duty=0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
10μ
100μ
SINGLE PULSE
PDM
t
T
Duty = t/T
Rth (ch-c) = 0.89°C/W
1m
10m
100m
1
10
Pulse width tw (s)
SAFE OPERATING AREA
1000
ID max (pulse) *
100 ID max (continuous)
100 μs *
1 ms *
10
DC OPEATION
Tc = 25°C
1
0.1 ※ Single pulse Ta=25℃
Curves must be derated
linearly with increase in
temperature.
0.01
1
10
VDSS max
100
Drain-source voltage VDS (V)
EAS – Tch
500
400
300
200
100
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
20 V
−5 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 1Ω
VDD = 25 V, L = 200 μH
Wavwform
ΕAS
=
1
2
⋅L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2009-09-29
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TK60D08J1.PDF ] | |
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