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PDF 2SK4207 Data sheet ( Hoja de datos )
| Número de pieza | 2SK4207 | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK4207 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK4207
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK4207
Swiching Regulator Applications
z Low drain−source ON-resistance: RDS (ON) = 0.78 Ω (typ.)
z High forward transfer admittance:|Yfs| = 11 S (typ.)
z Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
z Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
15.9max.
Unit: mm
Ф3.2±0.2
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
900
900
±30
13
39
150
491
13
15
150
−55 to 150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
2.0±0.3
1.0
＋0.3
－0.25
5.45±0.2
5.45±0.2
12 3
1: GATE
2: DRAIN (HEATSINK)
3: SOURCE
JEDEC
―
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and
Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c)
Rth (ch−a)
0.833
50
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.3 mH, RG = 25 Ω, IAR = 13 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
Start of commercial production
2008-02
1 2013-11-01
1 page  
10
1
Duty=0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.001
10μ
100μ
rth – tw
Single pulse
1m
10m
100m
Pulse width tw (s)
PDM
t
T
Duty = t/T
Rth (ch-c) = 0.833°C/W
1
10
2SK4207
SAFE OPERATING AREA
100
ID max (Pulse) *
100 μs *
ID max (Continuous)
10
1 ms *
DC operation
Tc = 25°C
1
0.1
※ Single pulse Ta=25℃
Curves must be derated
linearly with increase in
temperature.
0.01
1
10
VDSS max
100 1000
Drain−source voltage VDS (V)
EAS – Tch
600
500
400
300
200
100
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 90 V, L = 5.3 mH
Wave form
ΕAS
=
1
2
⋅L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2013-11-01
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK4207.PDF ] | |
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