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PDF TK50J30D Data sheet ( Hoja de datos )
| Número de pieza | TK50J30D | |
| Descripción | MOSFETs | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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MOSFETs Silicon N-Channel MOS (π-MOS)
TK50J30D
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.04 Ω (typ.)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V)
(3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK50J30D
1: Gate (G)
2: Drain (D)(Heatsink)
3: Source (S)
TO-3P(N)
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 300 V
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
(Tc = 25)
(Note 1)
(Note 1)
(Note 2)
(Note 3)
(Note 1)
(Note 1)
VGSS
ID
IDP
PD
EAS
IAR
IDR
IDRP
Tch
Tstg
±20
50
150
410
494
50
50
150
150
-55 to 150
A
W
mJ
A
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2011-10-10
Rev.2.0
1 page  
8. Characteristics Curves (Note)
TK50J30D
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 |Yfs| - ID
Fig. 8.6 RDS(ON) - ID
5 2011-10-10
Rev.2.0
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet TK50J30D.PDF ] | |
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