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PDF TK3904NND03 Data sheet ( Hoja de datos )
| Número de pieza | TK3904NND03 | |
| Descripción | Plastic-Encapsulate Transistors | |
| Fabricantes | WILLAS | |
| Logotipo |  |
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WILLAS
FM120-M
TK3904NND0T3HRU
WBF1B.0APS-U0R3FBACEPMlaOsUNtiTcS-CEHnOTcTaKYpBsAuRlRaIEtReRTECraTInFIEsRiSs-t2o0Vr-s200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
• Batch process design, excellent power dissipation offers
TRANSISTORbetter reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
DESCRIPTIOoNptimize board space.
NPN Epitaxi•aLl oSwilipcoownerTlroasns,shisigtoh refficiency.
• High current capability, low forward voltage drop.
FEATURES• High surge capability.
Epitaxial Pla•nGaur aDrdierinCgofonrsotvruercvtoioltnage protection.
Complemen•taUrlytraPhNigPh-TsyppeeedAsvwaiticlahibnlge. (TK3906NND03)
UAllstroa-ASvmaialallbS••leuLSMeriiIlnfaLiacd-oLcS-nfeeTreeaDMepd-i1ptoaF9aux5rrnite0ast0elmpP/2Vleaa2eenc8trakesranicovghnieripo,nmmeetnatlaslislitcaonndjaurndcstioofn.
• RoHS product for packing code suffix "G"
APPLICATIOHNalogen free product for packing code suffix "H"
General PurMpoesechAmanplifciear,l sdwaittcahing
For portable•eEqpuoixpym: UeLn9t:4(-iV.e0.rMateodbfillaempehroetnaerd,ManPt 3, MD,CD-ROM,
DVD-ROM,
•NCoateseb:oMookldPedCp,l
etc.)
astic,
SOD-123H
Pb-Free
pa• cTekramginealsis:Palavteaditlearmbilneals,
solderable
per
,
MIL-STD-750
RoHS product for paMcektihnogd 2c0o2d6 e suffix ”G”
• Polarity : Indicated by cathode band
Halogen
fre• eMopurnotidnguPcot
for packing
sition : Any
code
suffix
“H”
Package outline
C
WBFBP-03B
(1.2×1.2×0.5)
SOD-123H
TOP
unit: mm
0.146(3.7)
0.130(3.3)
B
E 0.012(0.3) Typ.
1. BASE
C
2. EMITTER
3. COLLECTOR BACK
0.071(1.8)
0.056(1.4)
EB
0.040(1.0)
0.024(0.6)
M0.03A1(0R.8)KTyIpN. G:1N
C
0.031(0.8) Typ.
1N Dimensions in inches and (millimeters)
• Weight : Approximated 0.011 gram
BE
MAXIMUM RATINGMSA(XTIaM=U25M℃RuAnTlIeNsGsSoAthNeDrwEiLsEeCnToRteICdA) L CHARACTERISTICS
SymRbaotilngs at 25℃ ambient temperature unlePsasroatmheerwteisre specified.
Value
Unit
Single phase half wave, 60Hz, resistive of inductive load.
VCBOFor capaCcoitilvleecltooard-B, daesreateVoclutarrgenet by 20%
60 V
VCEO
Collector-EmRitAteTrINVGoSltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH F4M0160-MH FM180-MH FM110V0-MH FM1150-MH FM1200
VEBOMarking CEomdeitter-Base Voltage
12 13 14 15 616
18 10V 115 120
IC MaximumCRoelcleucrrteonrt CPeuarkreRnetv-eCrsoenVtionltuaogeus
VRRM
20
30
40
50 0.260
80 100A 150 200
PC MaximumCRoMllSecVtoolrtaDgeissipation
VRMS
14
21
28
35 0.1452
56 70W 105 140
TJ MaximumJDuCncBtlioocnkiTnegmVoplteargaeture
VDC 20 30 40 50 15600
80 10℃0 150 200
Tst g MaximumSAtoveraraggee FToermwapredrRaetucrtiefied Current
IO
Peak Forward Surge Current 8.3 ms single half sine-wave
ELECTsuRpeIrCimApoLsedCoHn rAateRdAloaCdT(JEEDREICSmTeItChoSd) (Ta=25℃
uIFnSMless
otherwise
specified)
-55~151 0.0
30
℃
Typical Thermal Resistance (Note 2)
TypicalPJaurnactmionetCearpacitance (Note 1)
CollecOtpoerr-abtinagseTebmrpeearaktduroewRnanvgoeltage
RΘJA
Symbol CJ
Test co nditions
V(BR)CBO TJIC=10μA,IE=0-55 to +125
40
Min120
60
Typ Max
-55 to +150
Unit
V
CEmolil tetceStrtoo-brra-agesemeTiebtmtreepreabrkardtueoraCewkHRdnAaoRnvwgAoeCnltTavEgoRelItSaTgICeS
CollecMtaoxrimcuumt-FoofrfwcaurdrrVeonltatge at 1.0A DC
V(BR)CEOTSTGIC=1mA,IB=0
-4605 to +175
V
V(BR)EBO IE=10μA,IC=0
6V
ICEX
SYMBOL FM120-MH FM130-MH FM140-MH
VFVCE=30V,VEB(off)=3V0.50
FM150-MH FM160-MH
0.70
FM180-MH FM1100-MH
0.85 0.05
FM1150-MH
μ0A.9
FM1200-
0.92
EmitteMraxcimutu-mofAfvceurargreenRteverse Current at @T A=25℃IEBO IRVEB=5V,IC=0
Rated DC Blocking Voltage
@T A=125h℃FE(1) VCE=1V,IC=0.1mA
0.5
40 10
0.1 μA
NOTES:
hFE(2) VCE=1V,IC=1mA
DC cu1-rMreenastugreadinat 1 MHZ and applied reverse voltage ofh4F.0E(V3)DC. VCE=1V,IC=10mA
70
100 300
2- Thermal Resistance From Junction to Ambient
Collector-emitter saturation voltage
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VCE=1V,IC=50mA
VCE=1V,IC=100mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
60
30
0.2 V
0.3 V
Base-emitter saturation voltage
Transiti2on01fr2eq-0ue6ncy
VBE(sat)1
VBE(sat)2
fT
IC=10mA,IB=1mA
IC=50mA,IB=5mA
VCE=20V,IC=10mA,f=100MHz
0.65 0.85 V
0.95 V
300 WILLAS ELECTRMHOzNIC CO
2012-0
WILLAS ELECTRONIC CORP.
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