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PDF SSM6E03TU Data sheet ( Hoja de datos )
| Número de pieza | SSM6E03TU | |
| Descripción | Silicon P-Channel MOS Type + N-Channel MOS Type | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSM6E03TU (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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SSM6E03TU
TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type
SSM6E03TU
Power Management Switch Applications
• P-channel MOSFET and 1.8 V drive
• N-channel MOSFET and 1.5 V drive
• P-channel MOSFET and N-channel MOSFET incorporated into one
package.
• Low power dissipation due to P-channel MOSFET that features low
RDS (ON) and low-voltage operation
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
VDS
VGSS
ID
IDP (Note 1)
Rating
−20
±8
-1.8
-3.6
Unit
V
V
A
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
VDS
VGSS
ID
IDP (Note 1)
Rating
20
± 10
0.1
0.2
Unit
V
V
A
Absolute Maximum Ratings (Q1, Q2 common)
(Ta = 25°C)
Unit: mm
2.1±0.1
1.7±0.1
16
25
34
1.Nch source
2.Pch drain
3.Pch drain
UF6
JEDEC
4.Pch source
5.Nch gate
6.Pch gate
Nch drain
JEITA
TOSHIBA
2-2T1D
Weight: 7.0 mg (typ.)
Characteristics
Symbol
Rating
Unit
Drain power dissipation
Channel temperature
Storage temperature range
PD (Note 2)
Tch
Tstg
0.5
150
−55 to 150
W
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width limited by maximum channel temperature.
Note 2: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2)
Marking
65
4
Equivalent Circuit (top view)
654
KTC
Q1
Q2
123
12
1
3
2009-10-07
1 page  
Q1 (Pch MOSFET)
10
Common Source
VDS = -3 V
Ta = 25
|Yfs| - ID
25
Ta = 85
-25
1
0.1
-0.01
-0.1 -1
Drain Current ID (A)
-10
SSM6E03TU
IDR - VDS
10
Common Source
VGS = 0
Ta = 25
25
1
0.1 -25
0.01 Ta = 85
0.001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
1000
100
10
-0.1
C - VDS
Ciss
Coss
Crss
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25
-1 -10 -100
1000
toff
100
tf
ton
10
tr
t - ID
Common Source
VDD = -10 V
VGS = 0 to -2.5 V
Ta = 25
1
−00..0011
−0..11
−1
Drain Current ID (A)
−110
PD - Ta
1000
Mounted on an FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
800
600
400
200
0
0 20 40 60 80 100 120 140 160
Ambient Temperature Ta (°C)
5
2009-10-07
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SSM6E03TU.PDF ] | |
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