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PDF SSM6E02TU Data sheet ( Hoja de datos )
| Número de pieza | SSM6E02TU | |
| Descripción | Silicon P-Channel MOS Type + N-Channel MOS Type | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSM6E02TU (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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TOSHIBA Multi-Chip Device
Silicon P-Channel MOS Type + N-Channel MOS Type
SSM6E02TU
SSM6E02TU
○Power Management Switch Applications
• 1.5 V drive
• P-channel MOSFET and N-channel MOSFET incorporated into one
package.
• Low power dissipation due to P-channel MOSFET that features low
RDS (ON) and low-voltage operation
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
VDS
VGSS
ID
IDP (Note 1)
Rating
−20
±8
-1.8
-3.6
Unit
V
V
A
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
VDS
VGSS
ID
IDP (Note 1)
Rating
20
± 10
0.1
0.2
Unit
V
V
A
Unit: mm
2.1±0.1
1.7±0.1
16
25
34
1.Nch source
2.Pch drain
3.Pch drain
UF6
JEDEC
4.Pch source
5.Nch gate
6.Pch gate
Nch drain
―
JEITA
―
TOSHIBA
2-2T1D
Weight: 7.0 mg (typ.)
Absolute Maximum Ratings (Q1, Q2 common) (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain power dissipation
Channel temperature
Storage temperature range
PD (Note 2)
Tch
Tstg
0.5
150
−55 to 150
W
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width limited by maximum channel temperature.
Note 2: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm2)
1 2009-10-07
1 page  
Q1 (Pch MOSFET)
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
−25
Vth – Ta
Common Source
VDS = -3 V
ID = -1 mA
0
25 50
75 100 125 150
Ambient temperature Ta (°C)
SSM6E02TU
|Yfs| – ID
30
Common Source
10 VDS = -3 V
Ta = 25 °C
3
1
0.3
0.1
0.03
0.01
-1
-10
-100
-1000
Drain current ID (mA)
-10000
5000
3000
C – VDS
1000
500
300
Ciss
100
50
30
10
-0.1
Common
Source
Ta = 25 °C
f = 1 MHz
VGS = 0 V
-1
Coss
Crss
-10
Drain – Source voltage VDS (V)
-100
Dynamic Input Characteristic
-10
-9
-8
-7
-6 VDD = -16 V
-5
-4
-3
-2
Common Source
-1 ID = -1.8 A
Ta = 25 °C
0 0 5 10 15 20 25
Total gate charge Qg (nC)
1000
toff
100
tf
ton
10
tr
1
-0.01
t – ID
Common Source
VDD = -10 V
VGS = 0 to -2.5V
Ta = 25 °C
RG = 4.7 Ω
-0.1 -1
-10
Drain current ID (A)
IDR – VDS
2
Common Source
VGS = 0 V
Ta = 25 °C
1.5
G
D
IDR
S
1
0.5
0 0 0.2 0.4 0.6 0.8 1 1.2
Drain-Source voltage VDS (V)
5 2009-10-07
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SSM6E02TU.PDF ] | |
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