|
|
PDF SSM6E01TU Data sheet ( Hoja de datos )
| Número de pieza | SSM6E01TU | |
| Descripción | Silicon P-Channel MOS Type (U-MOS II) + N-Channel MOS Type (Planer) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SSM6E01TU (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
SSM6E01TU
TOSHIBA Multi-Chip Device
Silicon P-Channel MOS Type (U-MOS II) + N-Channel MOS Type (Planer)
SSM6E01TU
Load Switch Applications
Unit: mm
· P-channel MOSFET and N-channel MOSFET incorporated into one
package.
· Low power dissipation due to P-channel MOSFET that features low
RDS (ON) and low-voltage operation
Q1 Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
VDS
VGSS
ID
IDP (Note 2)
Rating
-12
±12
-1.0
-2.0
Unit
V
V
A
Q2 Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
VDS
VGSS
ID
IDP (Note 2)
Rating
20
10
0.05
0.2
Unit
V
V
A
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: 7.0 mg (typ.)
Maximum Ratings (Q1, Q2 common) (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain power dissipation
Channel temperature
Storage temperature range
PD (Note 1)
Tch
Tstg
0.5
150
-55~150
W
°C
°C
Note 1: Mounted on an FR4 board (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm2)
Note 2: Pulse width limited by maximum channel temperature.
Marking
Equivalent Circuit (top view)
654
654
KTA
Q1
Q2
123
12
1
3
2003-01-16
1 page  
Q1 (Pch MOSFET)
ID – VDS
-2
-4 V
-2.0 V
-1.5
-10 V
-1.8 V
-1.7 V
-1
-0.5
0
0
Common source
Ta = 25°C
-0.5 -1 -1.5
Drain-Source voltage VDS (V)
-2
SSM6E01TU
-10000
Common source
VDS = -3 V
-1000
ID – VGS
-100
Ta = 25°C
-10
100°C
-25°C
-1
-0.1
-0.01
0
-0.5 -1 -1.5 -2
Gate-Source voltage VGS (V)
-2.5
RDS (ON) – ID
0.5
Common source
Ta = 25°C
0.4
0.3
0.2 -2.5 V
0.1 -4.0 V
0
0 -0.5 -1.0 -1.5
Drain current ID (A)
-2.0
RDS (ON) – VGS
1
Common source
ID = -0.5 A
0.8
0.6
0.4
25°C
0.2 Ta = 100°C
-25°C
0
0 -2 -4 -6 -8 -10 -12
Gate-Source voltage VGS (V)
RDS (ON) – Ta
0.5
Common source
ID = -0.5 A
0.4
0.3
-2.5 V
0.2
-4 V
0.1
0
-25 0
25 50 75 100 125 150
Ambient temperature Ta (°C)
Vth – Ta
-1
Common source
-0.8
VDS = -3 V
ID = -0.1 mA
-0.6
-0.4
-0.2
0
-25 0
25 50 75 100 125 150
Ambient temperature Ta (°C)
5 2003-01-16
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SSM6E01TU.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SSM6E01TU | Silicon P-Channel MOS Type (U-MOS II) + N-Channel MOS Type (Planer) | Toshiba Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |