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PDF SSM6L39TU Data sheet ( Hoja de datos )
| Número de pieza | SSM6L39TU | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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SSM6L39TU
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type
SSM6L39TU
○ Power Management Switch Applications
○ High-Speed Switching Applications
• N-ch: 1.5-V drive
P-ch: 1.8-V drive
• N-ch, P-ch, 2-in-1
• Low ON-resistance Q1 N-ch: Ron = 247 mΩ (max) (@VGS = 1.5 V)
Ron = 190 mΩ (max) (@VGS = 1.8 V)
Ron = 139 mΩ (max) (@VGS = 2.5 V)
Q2 P-ch: Ron = 430 mΩ (max) (@VGS = −1.8 V)
Ron = 294 mΩ (max) (@VGS = −2.5 V)
Q1 Absolute Maximum Ratings (Ta = 25°C)
2.1±0.1
1.7±0.1
Unit: mm
16
25
34
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
DC
Pulse
ID
IDP
Q2 Absolute Maximum Ratings (Ta = 25°C)
20
±10
1.6
3.2
V
V
A
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS −20 V
Gate-source voltage
VGSS ±8 V
Drain current
DC
Pulse
ID
−1.5
A
IDP −3
Absolute Maximum Ratings (Ta = 25 °C) (Q1, Q2 Common)
UF6
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
6.Drain1
JEDEC
―
JEITA
―
TOSHIBA
2-2T1B
Weight: 7.0 mg (typ.)
Characteristics
Symbol
Rating
Unit
Drain power dissipation
PD(Note 1)
500
mW
Channel temperature
Tch 150 °C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: Mounted on an FR4 board. (total dissipation) (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm2 )
Marking
654
Equivalent Circuit (top view)
65
4
LL1
Q1 Q2
123
12
3
1 2008-04-22
1 page  
Q1 (N-ch MOSFET)
10
Common Source
VDS = 3 V
Ta = 25°C
3
|Yfs| – ID
1
0.3
0.1
0.01
0.1 1
Drain current ID (A)
10
1000
C – VDS
500
300
Ciss
100
50
30 Coss
Crss
10
5 Common Source
3 Ta = 25°C
f = 1 MHz
VGS = 0 V
1
0.1
1
10
Drain-source voltage VDS (V)
100
Dynamic Input Characteristic
10
Common Source
ID = 1.6A
8 Ta = 25°C
6
4
VDD = 10 V
VDD = 16 V
2
0
0 10
20
Total Gate Charge Qg (nC)
SSM6L39TU
IDR – VDS
10
1
0.1
0.01
0.001
0
25 °C
Ta =100 °C
Common Source
VGS = 0 V
D
G IDR
−25 °C
S
–0.5
–1.0
Drain-source voltage VDS (V)
–1.5
1000
toff
100
tf
t – ID
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25 °C
RG = 4.7 Ω
10 ton
tr
1
0.01
0.1 1
Drain current ID (A)
10
5 2008-04-22
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SSM6L39TU.PDF ] | |
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