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PDF SSM6N40TU Data sheet ( Hoja de datos )
| Número de pieza | SSM6N40TU | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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SSM6N40TU
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM6N40TU
○ Power Management Switch Applications
○ High-Speed Switching Applications
• 4 V drive
• N-ch 2-in-1
• Low ON-resistance:
Ron = 182mΩ (max) (@VGS = 4 V)
Ron = 122mΩ (max) (@VGS = 10 V)
Absolute Maximum Ratings (Ta = 25 °C) (Q1, Q2 Common)
1
2
3
2.1±0.1
1.7±0.1
Unit: mm
6
5
4
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS 30 V
Gate-source voltage
VGSS
± 20
V
Drain current
Drain power dissipation
DC
Pulse
ID
IDP
PD (Note1)
1.6
3.2
500
A
mW
UF6
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
6.Drain1
Channel temperature
Tch 150 °C
Storage temperature range
Tstg
−55~150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
TOSHIBA
―
2-2T1B
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 7.0mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: Mounted on an FR4 board. (total dissipation)
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm2 )
1 2007-11-05
1 page  
10
Common Source
VDS = 5 V
Ta = 25°C
3
|Yfs| – ID
1
0.3
0.1
0.01
0.1 1
Drain current ID (A)
10
1000
C – VDS
500
300
100
50
30
10
5 Common Source
3 Ta = 25°C
f = 1 MHz
VGS = 0 V
1
0.1
1
Ciss
Coss
Crss
10 100
Drain-source voltage VDS (V)
SSM6N40TU
IDR – VDS
10
1
0.1
0.01
0.001
0
25 °C
Ta =100 °C
Common Source
VGS = 0 V
D
G IDR
−25 °C
S
–0.5
–1.0
Drain-source voltage VDS (V)
–1.5
1000
toff
100 tf
t – ID
Common Source
VDD = 15 V
VGS = 0 ∼ 4.0 V
Ta = 25 °C
RG = 10 Ω
10
ton
tr
1
0.01
0.1 1
Drain current ID (A)
10
Dynamic Input Characteristic
10
Common Source
ID = 1.6A
8 Ta = 25°C
6
VDD = 15 V
VDD = 24 V
4
2
0
0 12 3 4 5 6
Total Gate Charge Qg (nC)
5
2007-11-05
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSM6N40TU.PDF ] | |
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