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Número de pieza | SSM6N39TU | |
Descripción | Field Effect Transistor | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSM6N39TU (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! SSM6N39TU
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM6N39TU
○ Power Management Switch Applications
○ High-Speed Switching Applications
2.1±0.1
1.7±0.1
Unit: mm
• 1.5-V drive
• N-ch 2-in-1
• Low ON-resistance:
Ron = 247mΩ (max) (@VGS = 1.5 V)
Ron = 190mΩ (max) (@VGS = 1.8 V)
Ron = 139mΩ (max) (@VGS = 2.5 V)
Ron = 119mΩ (max) (@VGS = 4.0 V)
16
25
34
Absolute Maximum Ratings (Ta = 25 °C) (Q1,Q2 Common)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS 20 V
Gate-source voltage
VGSS
± 10
V
Drain current
DC
Pulse
ID
IDP
1.6
A
3.2
UF6
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
6.Drain1
Drain power dissipation
PD (Note1)
500
mW
JEDEC
―
Channel temperature
Storage temperature range
Tch 150 °C
Tstg
−55 to 150
°C
JEITA
TOSHIBA
―
2-2T1B
Note: Using continuously under heavy loads (e.g. the application of
Weight: 7.0mg (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions
(i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
Note1: Mounted on an FR4 board. (total dissipation)
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm2 )
1 2008-01-22
1 page 10
Common Source
VDS = 3 V
Ta = 25°C
3
|Yfs| – ID
1
0.3
0.1
0.01
0.1 1
Drain current ID (A)
10
1000
C – VDS
500
300
Ciss
100
50
30 Coss
Crss
10
5 Common Source
3 Ta = 25°C
f = 1 MHz
VGS = 0 V
1
0.1
1
10
Drain-source voltage VDS (V)
100
Dynamic Input Characteristic
10
Common Source
ID = 1.6A
8 Ta = 25°C
6
4
VDD = 10 V
VDD = 16 V
2
0
0 10
20
Total Gate Charge Qg (nC)
SSM6N39TU
IDR – VDS
10
1
0.1
0.01
0.001
0
25 °C
Ta =100 °C
Common Source
VGS = 0 V
D
G IDR
−25 °C
S
–0.5
–1.0
Drain-source voltage VDS (V)
–1.5
1000
toff
100
tf
t – ID
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25 °C
RG = 4.7 Ω
10 ton
tr
1
0.01
0.1 1
Drain current ID (A)
10
5 2008-01-22
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet SSM6N39TU.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSM6N39TU | Field Effect Transistor | Toshiba Semiconductor |
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