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Número de pieza | SSM6P40TU | |
Descripción | Field Effect Transistor | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSM6P40TU (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! SSM6P40TU
TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type
SSM6P40TU
○ Power Management Switch Applications
○ High-Speed Switching Applications
• 4.0 V drive
• P-ch, 2-in-1
• Low ON-resistance:
Ron = 403mΩ (max) (@VGS = –4 V)
Ron = 226mΩ (max) (@VGS = –10 V)
Absolute Maximum Ratings (Ta = 25 °C) (Q1,Q2 Common)
2.1±0.1
1.7±0.1
Unit: mm
16
25
34
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS -30 V
Gate-source voltage
VGSS
± 20
V
Drain current
Drain power dissipation
Channel temperature
DC
Pulse
ID
IDP
PD (Note 1)
Tch
-1.4
-2.8
500
150
A
mW
°C
1.Source1
2.Gate1
3.Drain2
UF6
4.Source2
5.Gate2
6.Drain1
Storage temperature range
Tstg
−55 to150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
TOSHIBA
2-2T1B
Weight: 7.0 mg (typ.)
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note1: Mounted on an FR4 board. (Total dissipation)
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking
654
Equivalent Circuit (top view)
65
4
PP2
Q1 Q2
123
12
3
Start of commercial production
2008-04
1 2014-03-01
1 page rth – tw
1000
Single pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
100
10
1
0.001
0.01
0.1
1 10 100
Pulse width tw (s)
1000
SSM6P40TU
1000
800
PD – Ta
Mounted on FR4 board
(25.4mm × 25.4mm × 1.6 mm , Cu Pad : 645 mm2)
600
DC
400
200
0
-40 -20 0 20 40 60 80 100 120 140 160
*:Total Rating Ambient temperature Ta (°C)
5 2014-03-01
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet SSM6P40TU.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSM6P40TU | Field Effect Transistor | Toshiba Semiconductor |
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