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PDF SSM6P39TU Data sheet ( Hoja de datos )
| Número de pieza | SSM6P39TU | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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SSM6P39TU
TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type
SSM6P39TU
○ Power Management Switch Applications
○ High-Speed Switching Applications
2.1±0.1
1.7±0.1
Unit: mm
• 1.8 V drive
• P-ch 2-in-1
• Low ON-resistance:
Ron = 430mΩ (max) (@VGS = –1.8 V)
Ron = 294mΩ (max) (@VGS = –2.5 V)
Ron = 213mΩ (max) (@VGS = –4.0 V)
16
25
34
Absolute Maximum Ratings (Ta = 25 °C) (Q1,Q2 Common)
(Note)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
Rating
VDSS
VGSS
ID
IDP
PD (Note 1)
Tch
Tstg
-20
±8
-1.5
-3
500
150
−55 to 150
Unit
V
V
A
mW
°C
°C
UF6
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
6.Drain1
JEDEC
―
JEITA
―
TOSHIBA
2-2T1B
Weight: 7.0mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: Mounted on an FR4 board. (total dissipation)
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm2 )
Start of commercial production
2008-01
1 2014-03-01
1 page  
10
Common Source
VDS = -3.0 V
Ta = 25°C
3
|Yfs| – ID
1
0.3
0.1
-0.01
-0.1 -1
Drain current ID (A)
-10
1000
500
300
C – VDS
Ciss
100
50 Coss
30 Crss
10
5 Common Source
3 Ta = 25°C
f = 1 MHz
VGS = 0 V
1
-0.1
-1
-10
Drain-source voltage VDS (V)
-100
SSM6P39TU
10 Common Source
VGS = 0 V
D
1G
IDR
IDR – VDS
S
0.1
Ta =100 °C
25 °C
0.01
0.001
0
−25 °C
0.5 1.0
Drain-source voltage VDS (V)
1.5
1000
toff
100
tf
t – ID
Common Source
VDD = -10 V
VGS = 0 ∼ -2.5 V
Ta = 25 °C
RG = 4.7 Ω
10 ton
tr
1
-0.01
-0.1 -1
Drain current ID (A)
-10
Dynamic Input Characteristic
-10
Common Source
ID = -1.5 A
-8 Ta = 25°C
-6
VDD = -10 V VDD = -16 V
-4
-2
0
0 10 20
Total Gate Charge Qg (nC)
5
2014-03-01
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSM6P39TU.PDF ] | |
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