|
|
PDF SSM6P47NU Data sheet ( Hoja de datos )
| Número de pieza | SSM6P47NU | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SSM6P47NU (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
SSM6P47NU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS VI)
SSM6P47NU
Power Management Switch Applications
• 1.5V drive
• Low ON-resistance: RDS(on) = 242 mΩ (max) (@VGS = -1.5 V)
RDS(on) = 170 mΩ (max) (@VGS = -1.8 V)
RDS(on) = 125 mΩ (max) (@VGS = -2.5 V)
RDS(on) = 95 mΩ (max) (@VGS = -4.5 V)
2.0±0.1
Unit: mm
B
A
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
0～0.05
0.13
Characteristics
Drain-Source voltage
Symbol
VDSS
Rating
−20
Unit
V
*BOTTOM VIEW
1
0.65 0.65
0.95
2
3
Gate-Source voltage
VGSS ±8 V
Drain current
DC
Pulse
Power dissipation (Note 2)
ID
IDP (Note 1)
PD
t < 10s
−4.0
−8.0
1
2
A
W
Channel temperature
Tch 150 °C
Storage temperature
Tstg
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of
6
0.3±0.075
0.05 M A B
5
0.65±0.075
4
0.65±0.075
0.05 M A B
1. Source1 4. Source2
2. Gate1 5. Gate2
UDFN6
3. Drain2 6. Drain1
JEDEC
―
high temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2Y1A
operating temperature/current/voltage, etc.) are within the
Weight: 8.5 mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150 °C during use.
Note 2: Total rating
Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking(Top View)
65 4
PP4
Equivalent Circuit(Top View)
65 4
Pin Condition(Top View)
D1 G2 S2
Q1
Q2
D1 D2
1 23
Polarity marking
1 23
1
S1 G1 D2
Polarity marking (on the top)
*Electrodes : on the bottom
Start of commercial production
2010-06
2014-03-01
1 page  
1000
Rth – tw
b
100
a
10
1
0.001
Single pulse
a. Mounted on F4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
b. Mounted on F4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 2.13 mm2)
0.01
0.1
1
10
100 1000
Pulse width tw (s)
SSM6P47NU
PD – Ta
1400 a: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2)
b: Mounted on FR4 board
1200 (25.4mm × 25.4mm × 1.6mm , Cu Pad : 2.13mm2 )
1000
800
a
600
400
b
200
0
-40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
5 2014-03-01
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSM6P47NU.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SSM6P47NU | Field Effect Transistor | Toshiba Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |