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PDF SSM3K324R Data sheet ( Hoja de datos )
| Número de pieza | SSM3K324R | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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SSM3K324R
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K324R
○ Power Management Switch Applications
○ DC-DC Converter
Unit: mm
• 1.8V drive
• Low ON-resistance: RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V)
: RDS(ON) = 72 mΩ (max) (@VGS = 2.5 V)
: RDS(ON) = 109 mΩ (max) (@VGS = 1.8 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS 30 V
Gate-source voltage
VGSS ±12 V
Drain current
DC
Pulse
ID(Note 1)
IDP(Note 1,2)
4.0
10
A
Power dissipation
Channel temperature
Storage temperature range
PD (Note 3)
t ≦ 10s
Tch
Tstg
1
2
150
−55 to 150
W
°C
°C
SOT-23F
JEDEC
1. Gate
2. Source
3. Drain
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-3Z1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 11 mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: PW≦10ms,Duty≦1％
Note 3: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking
3
Equivalent Circuit (top view)
3
KFD
12
12
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration.
1 2012-12-21
1 page  
1000
100
Rth – tw
b
a
10
1
0.001
Single pulse
a. Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
b. Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.72 mm2×3)
0.01
0.1
1 10 100
Pulse width tw (s)
1000
SSM3K324R
PD – Ta
1600
a: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.72 mm2 ×3)
1200
a
800
b
400
0
-40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
5 2012-12-21
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSM3K324R.PDF ] | |
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