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PDF SSM6K407TU Data sheet ( Hoja de datos )
| Número de pieza | SSM6K407TU | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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SSM6K407TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K407TU
○ DC−DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
2.1±0.1
1.7±0.1
z 4V drive
z Low ON-resistance
: Ron = 440mΩ (max) (@VGS = 4 V)
: Ron = 300mΩ (max) (@VGS = 10 V)
16
25
34
Absolute Maximum Ratings (Ta = 25℃) (Note)
Characteristic
Drain–source voltage
Gate–source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
DC
Pulse
Symbol
Rating
VDSS
VGSS
ID
IDP
PD (Note1)
Tch
Tstg
60
±20
2
6
500
150
−55 to 150
Unit
V
V
A
mW
°C
°C
UF6
1,2,5,6 : Drain
3 : Gate
4 : Source
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-2T1D
Weight: 7mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
Start of commercial production
2008-01
1 2014-03-01
1 page  
SSM6K407TU
5 2014-03-01
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSM6K407TU.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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